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| STGF19NC60WD N-channel 600V - 7A - TO-220 Ultra fast PowerMESHTM IGBT PRELIMINARY DATA Features Type STGF19NC60WD VCES 600V IC @100C (max)@25C < 2.5V 7A 3 1 2 VCE(sat) High frequency operation Low CRES / CIES ratio (no cross-conduction susceptibility) Very soft ultra fast recovery antiparallel diode TO-220FP Description Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESHTM IGBTs, with outstanding performances. The suffix "W" identifies a family optimized for very high frequency application. Internal schematic diagram Applications High frequency motor controls, inverters, UPS HF, SMPS and PFC in both hard switch and resonant topologies Order code Part number STGF19NC60WD Marking GF19NC60WD Package TO-220 Packaging Tube May 2007 Rev 2 1/14 www.st.com 14 This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice. Contents STGF19NC60WD Contents 1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................ 7 3 4 5 Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 2/14 STGF19NC60WD Electrical ratings 1 Electrical ratings Table 1. Symbol VCES IC(1) IC(1) ICL (2) IF VGE PTOT Tstg Tj Absolute maximum ratings Parameter Collector-emitter voltage (VGS = 0) Collector current (continuous) at TC = 25C Collector current (continuous) at TC = 100C Collector current (pulsed) Diode RMS forward current at TC = 25C Gate-emitter voltage Total dissipation at TC = 25C Storage temperature - 55 to 150 Operating junction temperature C Value 600 14 7 35 12 20 32 Unit V A A A A V W 1. Calculated according to the iterative formula: T -T JMAX C I ( T ) = ----------------------------------------------------------------------------------------------------CC R xV (T , I ) THJ - C CESAT ( MAX ) C C 2. Vclamp=480V, Tj=150C, RG=10, VGE=15V Table 2. Symbol Rthj-case Rthj-amb Thermal resistance Parameter Thermal resistance junction-case max Thermal resistance junction-ambient max Value 4 62.5 Unit C/W C/W 3/14 Electrical characteristics STGF19NC60WD 2 Electrical characteristics (TCASE=25C unless otherwise specified) Table 3. Symbol VBR(CES) VCE(sat) VGE(th) ICES IGES gfs Static Parameter Collector-emitter breakdown voltage Test conditions IC= 1mA, VGE= 0 Min. 600 2.1 1.8 3.75 2.5 Typ. Max. Unit V V V V A mA nA S Collector-emitter saturation VGE= 15V, IC= 12A voltage VGE= 15V, IC=12A,Tc=125C Gate threshold voltage Collector cut-off current (VGE = 0) Gate-emitter leakage current (VCE = 0) Forward transconductance VCE= VGE, IC= 250 A VCE= Max rating,TC= 25C VCE= Max rating,TC= 125C VGE= 20V, VCE= 0 VCE = 15V, IC= 12A 5.75 150 1 100 10 Table 4. Symbol Cies Coes Cres Qg Qge Qgc Dynamic Parameter Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate-emitter charge Gate-collector charge Test conditions VCE = 25V, f = 1MHz, VGE = 0 VCE = 390V, IC = 5A, VGE = 15V, Figure 16 Min. Typ. 1180 130 26 53 10 21 Max. Unit pF pF pF nC nC nC 4/14 STGF19NC60WD Electrical characteristics Table 5. Symbol td(on) tr (di/dt)on td(on) tr (di/dt)on tr(Voff) td(off) tf tr(Voff) td(off) tf Switching on/off (inductive load) Parameter Turn-on delay time Current rise time Turn-on current slope Turn-on delay time Current rise time Turn-on current slope Off voltage rise time Turn-off delay time Current fall time Off voltage rise time Turn-off delay time Current fall time Test conditions VCC = 390V, IC = 12A , RG= 10 VGE= 15V, Figure 17 VCC = 390V, IC = 12A , RG= 10 VGE= 15V, Tj = 125C Figure 17 VCC = 390V, IC = 12A RG= 10 VGE= 15V, , Figure 17 VCC = 390V, IC = 12A , RG= 10 VGE= 15V, Tj = 125C Figure 17 Min. Typ. 25 7 1600 25 8 1400 22 90 43 47 127 77 Max. Unit ns ns A/s ns ns A/s ns ns ns ns ns ns Table 6. Symbol Eon(1) Eoff(2) Ets Eon(1) Eoff(2) Ets Switching energy (inductive load) Parameter Turn-on switching losses Turn-off switching losses Total switching losses Turn-on switching losses Turn-off switching losses Total switching losses Test conditions VCC = 390V, IC = 12A , RG= 10 VGE= 15V, Figure 17 VCC = 390V, IC = 12A RG= 10 VGE= 15V, , Tj = 125C Figure 17 Min. Typ. 81 125 206 161 255 416 Max. Unit J J J J J J 1. Eon is the turn-on losses when a typical diode is used in the test circuit in Figure 15 If the IGBT is offered in a package with a co-pak diode, the co-pack diode is used as external diode. IGBTs & Diode are at the same temperature (25C and 125C) 2. Turn-off losses include also the tail of the collector current 5/14 Electrical characteristics STGF19NC60WD Table 7. Symbol Vf trr Qrr Irrm trr Qrr Irrm Collector-emitter diode Parameter Forward on-voltage Reverse recovery time Reverse recovery charge Reverse recovery current Reverse recovery time Reverse recovery charge Reverse recovery current Test conditions If = 12A If = 12A, Tj = 125C If = 12A,VR = 50V, Tj = 25C, di/dt = 100 A/s Figure 18 If = 12A,VR = 50V, Tj =125C, di/dt = 100A/s Figure 18 Min. Typ. 1.9 1.5 31 30 2 59 102 4 Max. 2.5 Unit V V ns nC A ns nC A 6/14 STGF19NC60WD Electrical characteristics 2.1 Figure 1. Electrical characteristics (curves) Output characteristics Figure 2. Transfer characteristics Figure 3. Transconductance Figure 4. Collector-emitter on voltage vs temperature Figure 5. Gate charge vs gate-source voltage Figure 6. Capacitance variations 7/14 Electrical characteristics Figure 7. Normalized gate threshold voltage vs temperature Figure 8. STGF19NC60WD Collector-emitter on voltage vs collector current Figure 9. Normalized breakdown voltage vs temperature Figure 10. Switching losses vs temperature Figure 11. Switching losses vs gate resistance Figure 12. Switching losses vs collector current 8/14 STGF19NC60WD Figure 13. Turn-off SOA Electrical characteristics Figure 14. Emitter-collector diode characteristics 9/14 Test circuit STGF19NC60WD 3 Test circuit Figure 16. Gate charge test circuit Figure 15. Test circuit for inductive load switching Figure 17. Switching waveform Figure 18. Diode recovery time waveform 10/14 STGF19NC60WD Package mechanical data 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK(R) packages. These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 11/14 Package mechanical data STGF19NC60WD TO-220FP MECHANICAL DATA mm. MIN. 4.4 2.5 2.5 0.45 0.75 1.15 1.15 4.95 2.4 10 16 28.6 9.8 2.9 15.9 9 3 30.6 10.6 3.6 16.4 9.3 3.2 1.126 .0385 0.114 0.626 0.354 0.118 TYP MAX. 4.6 2.7 2.75 0.7 1 1.7 1.7 5.2 2.7 10.4 MIN. 0.173 0.098 0.098 0.017 0.030 0.045 0.045 0.195 0.094 0.393 0.630 1.204 0.417 0.141 0.645 0.366 0.126 inch TYP. MAX. 0.181 0.106 0.108 0.027 0.039 0.067 0.067 0.204 0.106 0.409 DIM. A B D E F F1 F2 G G1 H L2 L3 L4 L5 L6 L7 O A B L3 L6 L7 F1 F D G1 H F2 L2 L5 E 123 L4 12/14 G STGF19NC60WD Revision history 5 Revision history Table 8. Date 13-Oct-2006 08-May-2007 Revision history Revision 1 2 Initial release. Corrected value on Table 1, Table 2 Changes 13/14 STGF19NC60WD Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries ("ST") reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST's terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein. UNLESS OTHERWISE SET FORTH IN ST'S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZED ST REPRESENTATIVE, ST PRODUCTS ARE NOT RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY, DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER'S OWN RISK. Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST. ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners. (c) 2007 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 14/14 |
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